| 碲镉汞离子注入温度研究 |
| 投稿时间：2022-09-25 修订日期：2022-10-18 点此下载全文 |
| 引用本文：何斌,张桓,韩岗,王旭升,刘晨.碲镉汞离子注入温度研究[J].红外,2023,44(2):13~17 |
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| 中文摘要:作为pn结成型的重要参数，离子注入温度对晶格缺陷和材料扩散的影响较大。在碲镉汞的离子注入过程中，注入温度很大程度上影响着注入区的尺寸与光刻掩膜的形貌。从离子注入工艺的温度控制出发，研究了该工艺中的束流、注入能量、接触面粗糙度等因素；结合器件的I-V曲线，探究了注入温度对碲镉汞红外探测器性能的影响。结果表明，较低的注入束流、冷却温度以及良好的导热面，可以保证实际注入温度低于光刻胶的耐受温度，从而提高工艺过程的成品率。同时，较低的注入温度对于减小暗电流及注入区扩散面积起到了一定的作用，提高了碲镉汞红外探测器光敏元的性能。 |
| 中文关键词:离子注入 碲镉汞 注入温度 I-V曲线 |
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| Study on Ion Implantation Temperature of Mercury Cadmium Telluride |
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| Abstract:As an important parameter for p-n junction formation, ion implantation temperature has a great influence on lattice defects and material diffusion. During the implantation process of HgCdTe, the implantation temperature greatly affects the size of the implantation region and the morphology of the photolithographic mask. Based on the temperature control of ion implantation process, the beam current, beam energy, roughness of surface and other factors are studied. The influence of implantation temperature on the performance of HgCdTe infrared detectors is investigated by combining the I-V curve of the device. The results show that low beam current, cooling temperature and fine heat conduction surface can ensure that the actual injection temperature is lower than the photoresist temperature, and improve the yield of the process. At the same time, the lower temperature reduces the dark current and diffusion area of the injection region, which contributes to the performance of HgCdTe infrared detectors. |
| keywords:ion implantation HgCdTe implantation temperature I-V curve |
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