| 原位退火对Si基CdTe材料的位错抑制研究 |
| 投稿时间：2022-09-05 修订日期：2022-10-26 点此下载全文 |
| 引用本文：李震,王丹,高达,邢伟荣.原位退火对Si基CdTe材料的位错抑制研究[J].红外,2023,44(2):18~23 |
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| 中文摘要:硅与碲镉汞之间的外延碲化镉缓冲层能够减小外延过程中产生的高达107 cm-2的位错密度，高温热退火是抑制材料位错的有效方法之一。传统的离位退火技术会导致工艺不稳定和杂质污染等，而原位退火则可有效解决这些问题。利用原位退火技术对分子束外延生长的硅基碲化镉材料进行了位错抑制研究。对厚度约为9 μm的碲化镉材料进行了6个周期不同温度的热循环退火，并阐释了不同退火温度对硅基碲化镉材料位错的抑制效果。采用统计位错腐蚀坑密度的方法对比了退火前后材料的位错变化。可以发现，在退火温度为520℃时，位错密度可以达到1.2×106 cm-2，比未进行退火的CdTe材料的位错密度降低了半个数量级。 |
| 中文关键词:原位退火 碲化镉 位错密度 |
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| Study on Dislocation Suppression of Si-based CdTe Materials by In-situ Annealing |
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| Abstract:The epitaxial CdTe buffer layer between silicon and HgCdTe can reduce dislocation density of up to 107 cm-2 generated during epitaxial process. High-temperature thermal annealing is one of the effective methods to suppress dislocations in materials. The traditional out of place annealing technology will lead to process instability and impurity pollution, and in-situ annealing can effectively solve these problems. Dislocation suppress of Si-based CdTe grown by molecular beam epitaxy (MBE) was studied using in-situ annealing technique. The CdTe material with a thickness of about 9 μm was subjected to six cycles of thermal cycling annealing at different temperatures. The effect of different annealing temperatures on the dislocation suppression of Si-based CdTe material was explained. Statistical dislocation etch-pits density method was used to compare the dislocation changes of materials before and after annealing. It can be found that the dislocation density can reach 1.2×106 cm-2when the annealing temperature is 520℃, which is 0.5 orders of magnitude lower than that of the CdTe material without annealing. |
| keywords:in-situ annealing cadmium telluride dislocation density |
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