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直拉法制备锑化铟单晶的表面杂质研究
投稿时间:2019-08-20  修订日期:2019-08-29  点此下载全文
引用本文:董涛,张孟川,程波,赵超.直拉法制备锑化铟单晶的表面杂质研究[J].红外,2019,40(10):8~13
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作者单位E-mail
董涛 中国电子科技集团第十一研究所(华北光电技术研究所) 675489691@qq.com 
张孟川 中国电子科技集团第十一研究所(华北光电技术研究所)  
程波 中国电子科技集团第十一研究所(华北光电技术研究所)  
赵超 中国电子科技集团第十一研究所(华北光电技术研究所)  
中文摘要:制备高质量锑化铟(InSb)单晶是发展大规模红外焦平面器件以及新型高温红外探测器衬底材料的关键。而在用直拉法生长InSb的过程中,表面杂质的出现会严重影响成品率。利用X射线光电子能谱(X-ray Photoelectron Spectroscopy, XPS)技术研究了生产中InSb晶体表面杂质膜层的成分,分析了其主要来源及造成的影响,并采取相应工艺措施进行了改进。结果表明,InSb晶体表面杂质膜层的主要成分为In2O3、Sb2O3和Sb2O5三者的混合物以及碳沾污,其厚度不超过40 nm。通过对单晶炉处理和保护气氛的工艺优化,表面杂质大大减少,为获得高质量晶体奠定了基础。
中文关键词:直拉法  锑化铟  杂质  成分
 
Study on Surface Impurities of Indium Antimonide Single Crystal Prepared by Czochralski Method
Abstract:The preparation of high-quality indium antimonide (InSb) single crystal is the key to the development of large-format infrared focal plane devices and new substrate materials for high-temperature infrared detectors. However, in the process of growing InSb by the Czochralski method, the appearance of surface impurities will seriously affect the yield. The X-ray photoelectron spectroscopy (XPS) technology is used to study the composition of the impurity layer on the surface of InSb crystals in production, the main sources and their effects are analyzed, and corresponding process measures are adopted to improve them. The results show that the main components of the impurity layer on the surface of InSb crystals are a mixture of In2O3, Sb2O3 and Sb2O5 as well as carbon contamination, the thickness of which is not more than 40 nm. By optimizing the processing of the single crystal furnace treatment and the protective atmosphere, the surface impurities are greatly reduced, laying the foundation for obtaining high-quality crystals.
keywords:Czochralski method  InSb  impurity  composition
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