| In掺杂CdSe中红外透明导电薄膜温度特性研究 |
| 投稿时间：2025-03-21 修订日期：2025-04-08 点此下载全文 |
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| 中文摘要:在红外透明导电薄膜研究领域中，平衡高透光率和低电阻率之间的矛盾是一个重大的科学挑战。本文采用分子束外延（Molecular Beam Epitaxy, MBE）技术研究了生长温度对铟掺杂硒化镉（CdSe:In）薄膜电学性能的影响，制备出兼具204 cm2·V-1·s-1高迁移率以及6.95×10-5 Ω·m低电阻率的透明导电薄膜，其在1~4 μm的红外区域表现出具有＞87%的高透光率。其温变特性研究结果表明，薄膜电导率存在三个温度区间，不同的温度区间是由载流子传输机制的转变而区分的。此外，通过与已报到的中红外透明导电薄膜对比，CdSe:In薄膜在载流子迁移率及透光率方面展现了明显的优势。本研究为CdSe:In薄膜在中-远红外探测器中的应用奠定了实验与理论基础。 |
| 中文关键词:铟掺杂硒化镉 分子束外延 红外透明导电膜 载流子传输机制 |
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| Study on Temperature Characteristics of In doped CdSe infrared transparent conductive thin film |
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| Abstract:In the field of infrared transparent conductive films, reconciling the contradiction between high transmittance and low resistivity remains a formidable scientific challenge. This study optimized the effect of growth temperature on the electrical properties of indium doped cadmium selenide (CdSe:In) thin films through molecular beam epitaxy (MBE) technology. The results exhibit excellent performance with high mobility of 204 cm2·V-1·s-1 and low resistivity of 6.95×10-5 Ω·m. Furthermore, a high transmittance of over 87% in the wave infrared range of 1~4 μm has been evidenced. The study on the temperature dependent characteristics shows that there are three temperature ranges for the conductivity of the films, which are distinguished by the transition of carrier transport mechanisms at different temperature. In addition, compared with the other reported middle infrared transparent conductive films, CdSe:In film shows obvious advantages in carrier mobility and transmittance. This study provides an experimental and theoretical foundation for the application in mid-far infrared detectors. |
| keywords:Study on Temperature Characteristics of In doped CdSe middle infrared transparent conductive thin film |
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