| 液相外延碲镉汞薄膜表面“圆台”状缺陷研究 |
| 投稿时间：2024-12-17 修订日期：2025-01-04 点此下载全文 |
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| 作者 | 单位 | 地址 | | 杨美华* | 中国电子科技集团公司第十一研究所,北京10015,中国 | 北京市朝阳区酒仙桥路4号中国电子科技集团公司第十一研究所 | | 邢晓帅 | 中国电子科技集团公司第十一研究所,北京10015,中国 | | | 杨海燕 | 中国电子科技集团公司第十一研究所,北京10015,中国 | | | 胡易林 | 中国电子科技集团公司第十一研究所,北京10015,中国 | | | 李乾 | 中国电子科技集团公司第十一研究所,北京10015,中国 | | | 王利军 | 中国电子科技集团公司第十一研究所,北京10015,中国 | |
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| 中文摘要:为减小液相外延碲镉汞薄膜缺陷对红外探测器性能的影响，本文通过扫描电子显微镜、能量色散X射线光谱仪、聚焦离子束等多种测试表征手段以及对比实验，系统研究了一种特殊的表面缺陷——"圆台"状缺陷。该缺陷尺寸约150 μm到400 μm之间，光学显微镜下形貌类似于中间凹陷的圆台。通过成分分析，发现缺陷表面组分与正常形貌薄膜无明显差异。通过对碲锌镉衬底与碲镉汞外延层的界面进行分析，发现该缺陷为贯穿型缺陷，来源于碲锌镉衬底上中心有孔洞的三角形碲夹杂，且碲夹杂尺寸几乎都在20 μm以上。因此，可以通过提升碲锌镉衬底质量，并加强衬底筛选降低碲镉汞薄膜"圆台"状缺陷，提高碲镉汞外延材料的质量，满足高性能红外探测器发展的需求。 |
| 中文关键词:液相外延，碲镉汞，碲锌镉，缺陷 |
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| Study on the Frustum-shaped defects on the surface of HgCdTe film prepared by Liquid Phase Epitaxial growth |
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| Abstract:In order to reduce the influence of the defects of telluride cadmium mercury (HgCdTe) thin films grown by liquid phase epitaxy (LPE) on the performance of infrared detectors, a special type of surface defects, the frustum-shaped defect, was systematically studied by means of scanning electron microscopy, energy dispersive X-ray spectrometer, focused ion beam and comparative experiments. The size of these defects ranges significantly, from approximately 150 to 400 micrometers, and under an optical microscope, they exhibit a morphology resembling a frustum with a concave center. Compositional analysis revealed no
significant differences between the surface of the defect and the normal film morphology. Further analysis of the interface between the tellurium zinc cadium (CdZnTe) substrate and the HgCdTe film indicated that these penetrating defects orginate from triangular telluride inclusions with central holes on the CdZnTe substrate, and the size of tellurium inclusions is almost above 20 μm. Therefore, by improving the quality of the CdZnTe substrate and enhancing substrate screening, the frustum-shaped defects in HgCdTe films can be reduced, thereby improving the quality of HgCdTe epitaxial materials. This enhancement is essential to meet the demands of high-performance infrared detector development. |
| keywords:LPE, HgCdTe, CdZnTe, Defect |
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