| 中电科11所碲镉汞富汞垂直液相外延技术研究进展 |
| 投稿时间：2024-11-24 修订日期：2024-12-30 点此下载全文 |
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| 中文摘要:本文重点介绍了36mm×42mm富汞垂直液相外延技术,通过石墨舟优化设计和生长母液调控实现材料生长,并通过流场模拟计算对温场进行优化提升材料质量,成功实现了单次多片36mm×42mm碲镉汞双层异质结材料的生长,可稳定批量化产出。材料厚度均匀性、掺杂浓度、表面缺陷等指标满足大面阵p-on-n红外焦平面探测器的研制需求。 |
| 中文关键词:碲镉汞 富汞垂直液相外延 p-on-n 异质结 |
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| Progress of HgCdTe Mercury-Rich Vertical Liquid Phase Epitaxy in 11th Research Institute of CETC |
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| Abstract:In this paper, we focuse on the36mm×42mm mercury-rich vertical liquid phase epitaxy(VLPE) technique. By modifying the structure of the graphite boat carrying the substrates, the batch growth of large-size double heterojunction materials with dimensions of 36mm×42mm has been achieved. By combining the phase diagram of material growth and the calculated fluiddistribution, the fields of fluid and temperature in the growth area of the material are optimized to meet the development requirements of p-on-n infrared focal plane array detectors. The thickness deviation of the grown material and the electrical performance satisfies our expectation. The overall performance of the material meets the requirements for fabricating large-scale, large-format p-on-n infrared focal plane array detectors. |
| keywords:Mercury-Cadmium-Telluride, mercury-rich vertical liquid phase epitaxy, p-on-n double-layer heterojunctions |
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