| InASGaSb II类超晶格红外探测器台面成型质量研究 |
| 投稿时间：2024-11-20 修订日期：2024-12-16 点此下载全文 |
| 引用本文： |
| 摘要点击次数: 13 |
| 全文下载次数: 0 |
|
|
| 中文摘要:以中长双色InAs/GaSb II类超晶格红外探测器的深台面刻蚀为研究背景，研究光刻坚膜工艺与深台面刻蚀成型的关系。分析了不同坚膜温度对台面的图形转印效果和台面刻蚀成型质量的影响，优化得到最佳的坚膜工艺。将该工艺制备的光滑台面超晶格芯片与双色读出电路互连，然后封装进杜瓦内，通过液氮降温至77K后进行组件测试。实验结果表明，双色超晶格材料以AZ4620型光刻胶制备掩膜图形，梯度升温至140℃坚膜后，经干法刻蚀成型，获得了具有光滑侧壁的深台面结构。组件测试结果说明光滑侧壁可以有效降低组件的NETD、盲元率和非均匀性。 |
| 中文关键词:光刻，台面成型，光滑侧壁 |
| |
| Research on the surface molding quality of InAS/GaSb Class II superlattice infrared detector |
|
|
| Abstract:Taking the deep table etching of medium-length two-color InAs/GaSb class II superlattice infrared detectors as the research background, we study the relationship between the photolithographic solid-film process and the deep table etching molding. The effects of different solid film temperatures on the graphic transfer effect of the countertop and the quality of countertop etching are analyzed, and the best solid film process is optimized. The smooth countertop superlattice chip prepared by this process was interconnected with a two-color readout circuit, then encapsulated into a Dewar and cooled down to 77 K by liquid nitrogen for component testing. The experimental results show that the two-color superlattice material was prepared with AZ4620 photoresist for mask patterning, and after a gradient temperature increase to 140 °C for firming the film, it was formed by dry etching to obtain a deep countertop structure with smooth sidewalls. The module test results illustrate that the smooth sidewall can effectively reduce the NETD, blind element rate and non-uniformity of the module. |
| keywords:lithography,Countertop molding,Smooth sidewalls |
| HTML 查看/发表评论 下载PDF阅读器 |