| 分子束外延生长Si基碲镉汞材料的As掺杂研究 |
| 投稿时间：2024-11-14 修订日期：2024-11-21 点此下载全文 |
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| 中文摘要:本文报道了分子束外延（MBE）生长硅基碲镉汞（HgCdTe）过程中的As掺杂技术，利用As裂解源制备出原位p型掺杂的高质量HgCdTe材料，其中As掺杂浓度达到8×1018 cm-3。研究发现As元素的掺杂效果对生长温度、As束流、材料组分等材料生长参数十分敏感。通过对生长温度控制以及衬底加热方式的改进实现As浓度在材料横向和纵向的均匀分布。利用两步退火法开展As激活退火，随着退火温度的提高，激活浓度增加，而载流子迁移率降低明显。当As浓度低于3×1017 cm-3，激活率趋于100%，随着As掺杂浓度的增加，激活率呈现下降趋势。 |
| 中文关键词:分子束外延，碲镉汞，As掺杂 |
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| Study on As doping in HgCdTe materials grown by molecular beam epitaxy on Si substrate |
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| Abstract:We report As doped HgCdTe materials grown by molecular beam epitaxy on Si substrate. The HgCdTe materials is doped in situ during growth with high structural quality using As crackers, realizing As doping concentration of 8×1018 cm-3. We have noticed that As doping is highly sensitive to parameters used in material growth such as growth temperature, As beam current, and material composition. By improving the manipulation of growth temperature and heating method of substrate, the distribution of As concentration in both the horizontal and vertical directions in the material can be more evenly distributed. Two-step annealing method is used for As activation. It is found that when the annealing temperature increases, the activation concentration increases as well, and the carrier mobility decreases significantly. When the concentration is below 3×1017 cm-3, the activation rate is close to 100%. With the As doping concentration increasing, the activation rate decreases. |
| keywords:Molecular beam epitaxy, HgCdTe, As doping |
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