| 基于移动加热器法的碲锌镉晶体研究进展 |
| 投稿时间：2024-05-10 修订日期：2024-05-26 点此下载全文 |
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| 中文摘要:碲锌镉（Cd1-xZnxTe，CZT）具有优良的物理性质，可用于制备室温核辐射探测器以及用作碲镉汞红外焦平面衬底材料。多种方法可被用于生长CZT晶体，但难点仍在于获得大体积、低缺陷的单晶。移动加热器法（Travelling Heater Method，THM）是一种主要的CZT晶体生长方法，其具有生长温度低、单晶率高、组分均匀性好等优点。本文对THM法生长CZT晶体进行了综述，介绍了其发展历程和相关研究结果。文章首先介绍了THM生长基本原理及工艺流程，然后对生长过程宏观形貌特征与关键影响因素进行了阐述，接着分析了Te夹杂缺陷与微观界面形貌的相关关系和抑制手段，最后对比了THM法与布里奇曼法（Bridgman）生长CZT晶体的Zn组分分布差异性，突出了THM法在宏观成分均匀性方面的优势。 |
| 中文关键词:碲锌镉 移动加热器法 晶体生长 红外焦平面 |
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| Research Process on Cd1-xZnxTe Crystal Growth using Travelling Heater Method |
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| Abstract:Cadmium Zinc Telluride (Cd1-xZnxTe, CZT) is a vital material that can be used for fabricating room temperature nuclear detectors and also used as the substrate of Hg1-xCdxTe epitaxy layer due to its unique physical properties. Many methods have already been proposed to grow CZT crystal, but it is still hard to get CZT crystal with high monocrystal volume and low defect density. The Travelling Heater Method (THM), a primary method for the growth of CZT crystal, has the merits of lower growth temperature, higher yield, and good uniformity of Zn component. This review offers an overview of the THM growth of CZT crystal, including the development process and main study results. In this paper, the basic theoretical principle and technology process are first introduced. The macroscopic growth interface features and primary influence factor are secondly clarified. Then, the correlation between microscopic growth interface morphology and Te inclusion and the methods for restraint of Te inclusion are analyzed. Finally, the distribution feature of Zn component in CZT grown by THM superior to that in CZT grown by Bridgman process is highlighted. |
| keywords:Cd1-xZnxTe THM Crystal growth Infrared focal plane |
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