| 场效应晶体管太赫兹探测器在太赫兹成像领域的研究进展 |
| 投稿时间：2024-01-12 修订日期：2024-02-01 点此下载全文 |
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| 基金项目:国家自然科学基金项目（面上项目，重点项目，重大项目） |
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| 中文摘要:太赫兹（Terahertz, THz）波具有低能量、穿透性强、高分辨率等特性，因而THz成像技术在安全检测、医学诊断、无损探伤等领域具有广阔应用前景。THz探测器作为THz成像系统的重要组成部分，其性能对成像分辨率、成像速度等有着重要影响。场效应晶体管（Field Effect Transistor, FET）THz探测器因具备可室温工作、易大面积集成、响应速度快等特性，在成像应用中潜力巨大。本文综述了近年来FET THz探测器在THz成像领域的研究进展，包括成像阵列、材料选择等方面的进展，分析了设计和制造中存在的问题，指出天线和像素间距是限制大规模阵列化的重要因素，并在此基础上对未来的研究方向进行了展望，指出新的材料和结构设计将进一步改善器件性能，实现更快速清晰的THz成像。 |
| 中文关键词:太赫兹成像，场效应晶体管，太赫兹探测器，HEMT，CMOS，低维材料 |
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| Research progress of field effect transistor terahertz detector in terahertz imaging |
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| Abstract:Terahertz (THz) waves have characteristics such as low energy, strong penetration, and high resolution. Therefore, THz imaging technology has broad prospects in areas such as security inspection, medical diagnosis, and non-destructive testing. As an important component of THz imaging systems, the performance of THz detectors has a significant impact on imaging resolution and speed. Field Effect Transistor (FET) THz detectors, due to their characteristics of being able to operate at room temperature, easy large-scale integration, and fast response speed, have enormous potential in imaging applications. This paper reviews the research progress of FET THz detectors in the field of THz imaging in recent years, including advances in imaging arrays, material selection, and analysis of existing design and manufacturing issues. It points out that the antenna and pixel spacing are important factors limiting large-scale arraying, and based on this, it provides an outlook on future research directions, indicating that new materials and structural designs will further improve device performance, achieving faster and clearer THz imaging. |
| keywords:Terahertz imaging, field effect transistor, terahertz detector, HEMT, CMOS, low dimensional materials |
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