| 基于高低温循环退火方法的硅基碲镉汞位错抑制研究 |
| 投稿时间：2024-05-28 修订日期：2024-06-12 点此下载全文 |
| 引用本文：姜梦佳,折伟林,王丹,李震,周睿,管崇尚,邢伟荣,牛佳佳.基于高低温循环退火方法的硅基碲镉汞位错抑制研究[J].红外,2025,46(1):28~34 |
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| 中文摘要:高低温循环退火是降低碲镉汞(HgCdTe)材料位错密度的有效策略之一，被广泛用于提升HgCdTe质量。使用离位的高低温循环退火工艺对硅基HgCdTe材料进行热处理，并通过设计正交试验研究退火条件对HgCdTe材料的影响。在温度区间250～450 ℃、升温时间5 min、循环12次的条件下获得最佳退火效果。采用统计位错密度的方法对比退火前后HgCdTe材料的位错变化。与未退火的HgCdTe相比，退火后的HgCdTe位错密度降低了80%左右，为1×106～2×106 cm-2。X射线摇摆曲线测试结果表明，退火后硅基HgCdTe的半峰宽可降至75～80 arcsec。本研究综合提升了硅基HgCdTe的质量，为焦平面器件的研发提供了高质量的材料基础。 |
| 中文关键词:硅基碲镉汞 高低温循环退火 位错密度 半峰宽 |
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| Study on Dislocation Suppression of Silicon-Based HgCdTe Based on High- and Low-Temperature Cyclic Annealing Method |
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| Abstract:High- and low-temperature cyclic annealing is one of the effective strategies to reduce the dislocation density of mercury cadmium telluride (HgCdTe) materials and is widely used to improve the quality of HgCdTe. The silicon-based HgCdTe material is heat treated using an off-site high- and low-temperature cyclic annealing process, and the effect of annealing conditions on the HgCdTe material is studied by designing an orthogonal experiment. The best annealing effect is obtained under the conditions of a temperature range of 250 ℃ to 450 ℃, a heating time of 5 min, and 12 cycles. The statistical dislocation density method is used to compare the dislocation changes of HgCdTe materials before and after annealing. Compared with the unannealed HgCdTe, the dislocation density of the annealed HgCdTe is reduced by about 80% to 1×106－2×106 cm-2. The X-ray rocking curve test results show that the half-peak width of the silicon-based HgCdTe can be reduced to 75－80 arcsec after annealing. This study comprehensively improves the quality of silicon-based HgCdTe and provides a high-quality material foundation for the research and development of focal plane devices. |
| keywords:silicon-based HgCdTe high- and low-temperature cyclic annealing dislocation density half-peak width |
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