| 中/长波双色II类超晶格红外焦平面器件退火技术研究 |
| 投稿时间：2024-11-28 修订日期：2025-01-06 点此下载全文 |
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| 中文摘要:摘 要：
双色探测器相比于单色探测器具有更高的探测精度，是三代红外探测器中的典型代表。II类超晶格具有宽吸收光谱、高均匀性等突出优点，可用以制备双色探测器。退火技术则可以通过提高侧壁钝化质量及材料与电极接触质量来实现改善双色II类超晶格器件性能。本文通过对器件进行一系列不同温度退火实验，将退火对中/长波双色II类超晶格红外焦平面器件性能影响进行分析研究。通过优化退火工艺，pnp结构器件长波对应阻抗可提高5.6倍，npn结构器件长波对应阻抗可提高31%。相比于通过优化材料结构、器件结构提升器件性能，退火具有高效、简便等突出优点。该研究对中/长波双色II类超晶格红外焦平面器件性能提升具有一定指导意义。 |
| 中文关键词:II类超晶格 退火 红外探测器 |
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| Study on mid/long-wave dual-colour type-II superlattice infrared focal plane device annealing technology |
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| Abstract:Abstract：The dual-colour detector has higher precision than the single colour detector. It is the typical device of the third-generation infrared detectors. Type-II superlattice material which could be used to fabricate the dual-colour detector has the advantages of broad absorption spectrum, high homogeneity, etc. Annealing technology could improve the performance of the dual-colour type-II superlattice device by enhancing the passivation quality of the side wall and the contact quality of the material with the electrode. This paper analyzes and studies on the performance impact of the mid/long-wave dual-colour type-II superlattice infrared focal plane device by the annealing with series of experiments under different temperature. The impedance corresponding to the long wave of the pnp structure device could increase to 5.6 times and of the npn structure device could increase to 131% by the optimizing annealing. Compared with the improving device performance by optimizing material structure and device structure, annealing has the outstanding advantages of high efficiency and simplicity. The research has great significance in improving the performance of the mid/long-wave dual-colour type-II superlattice infrared focal plane device. |
| keywords:type-II superlattice annealing technology infrared detector |
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