| 碲镉汞雪崩光电探测器的发展与展望 |
| 投稿时间：2024-06-13 修订日期：2024-06-29 点此下载全文 |
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| 中文摘要:本文通过对现有的几类主流碲镉汞(HgCdTe，MCT)雪崩光电二极管(APD) 器件的梳理，简要总结了目前国际上主流的APD器件发展路线，分析了包括PIN，HDVIP和SAM型器件在内的主要APD器件的结构与性能特点，通过对比不同技术路线的器件优化思路和性能特点，对相关器件的继续发展进行了展望。目前SAM型器件是主流APD器件中暗电流抑制和高温工作性能最好的结构，能够实现高增益条件下高灵敏度探测，这也为相关器件工艺的发展开辟了新方向。 |
| 中文关键词:碲镉汞 雪崩 增益 噪声 |
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| Development and prospect for HgCdTe avalanche photo-electronic detectors |
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| Abstract:This paper made a brief reorganization for main types of mercury cadmium telluride (HgCdTe/MCT) based avalanche photo diode (APD) devices in current application with their development route, and then undertook an analysis for structure and performance properties of mainstream devices including different types of devices including PIN, HDVIP and SAM. Through comparison of optimization design and performance properties of different types of devices, we made a prospect for successive development of higher performance APD devices, as the SAM type APD possesses the optimized structure in mainstream APD devices with its intended dark current suppression structure and therefore high operation temperature performance, making it realize high sensitivity detection with high gain, which would be a significant direction for development of related devices and technology. |
| keywords:HgCdTe Avalanche Gain Noise |
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