| 基于高低温循环退火方法的硅基碲镉汞位错抑制研究 |
| 投稿时间：2024-05-28 修订日期：2024-06-12 点此下载全文 |
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| 中文摘要:高低温循环退火是降低碲镉汞（HgCdTe）材料位错密度的有效策略之一，被广泛应用于提升HgCdTe质量。本文使用离位的高低温循环退火工艺对硅基HgCdTe材料进行热处理，通过设计正交试验具体研究退火条件对HgCdTe材料的影响。在温度区间250～450℃、升温时间5min、循环12次的条件下获得最佳退火效果。采用统计位错密度的方法对比退火前后HgCdTe材料的位错变化，相比未进行退火的HgCdTe，退火后的HgCdTe位错密度降低了约80%，为（1～2）×106 cm-2。X射线摇摆曲线测试结果表明，退火后硅基HgCdTe的半峰宽可降至75～80 arcsec。本研究综合提升了硅基HgCdTe质量，为焦平面器件的研发提供了高质量的材料基础。 |
| 中文关键词:硅基碲镉汞 高低温循环退火 位错密度 半峰宽 |
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| Study on dislocation reduction of silicon-based HgCdTe materials by cyclic annealing at high and low temperature |
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| Abstract:High and low temperature cyclic annealing is one of the effective strategies to reduce the dislocation density of HgCdTe, and has been widely used to improve the quality of this material. In this paper, off-site high and low temperature cyclic annealing is used to heat treatment of silicon-based HgCdTe. By designing the orthogonal test, the effect of annealing conditions on the HgCdTe is studied. Under the optimum annealing conditions of 250～450℃ temperature range, 5min heating time and 12 cycles, the HgCdTe shows highest quality. The dislocation density of HgCdTe before and after annealing was compared by using the statistical method of dislocation corrosion pit density. Compared with the HgCdTe without annealing, the dislocation density of HgCdTe after annealing was reduced by about 80%, which is 1～2×106 cm-2. X-ray diffraction results show that the half-peak width of HgCdTe annealed can be reduced to 75～80 arcsec. This study comprehensively improves the quality of silicon-based HgCdTe and lays a good material foundation for the research and development of focal plane devices. |
| keywords:Study on dislocation suppression in silicon-based HgCdTe based on high and low temperature cyclic annealing method |
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