| 基于 3ω 法的微测辐射热计像元薄膜热导率测试 |
| 投稿时间：2024-03-08 修订日期：2024-04-10 点此下载全文 |
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| 中文摘要:热导是微测辐射热计像元的重要参数之一，其大小直接影响到像元的响应高低。热导与组成像元的薄膜材料的热导率相关，薄膜的特征尺寸、温度和淀积工艺皆会影响热导率。监控工艺线上薄膜的热导率，对于像元的设计具有重要意义。根据 3ω 谐波探测技术，搭建了薄膜热导率的测试系统，测试了厚度为 20~100 nm 的氮化硅（SiNx）及二氧化硅（SiO2）薄膜的热导率，包括温度特性和尺寸特性。根据尺寸特性计算得SiNx的本征热导率为 0.747 W/(m?K)，SiO2的本征热导率为 1.085 W/(m?K)。并测试了厚度为 100 nm 的钛（Ti）金属薄膜的热导率为 6.708 W/(m?K)。与基于光热法的测试系统相比，3ω 法测试台架搭建更简单。该方法利用MEMS制造工艺制备测试样品，是MEMS产品设计与制造中表征微纳尺度薄膜热导率的理想方案。 |
| 中文关键词:微测辐射热计 热导 薄膜热导率 3ω谐波探测技术 |
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| Thermal conductivity measurements of microbolometer pixel films by 3ω method |
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| Abstract:Thermal conductance is one of the most important parameters of microbolometer pixels and its magnitude directly affects the pixel response, which is related to the thermal conductivity of the thin-film materials that make up the pixel. The factors affecting the thermal conductivity of thin films include characteristic size, temperature and deposition process. Monitoring the thermal conductivity of thin films at the process line is important for the design of microbolometer pixels. Based on the 3ω harmonic detection technique, a test system for the thermal conductivity of thin films was constructed, and the thermal conductivities of SiNx and SiO2 films with thicknesses ranging from 20 to 100 nm were measured, including temperature and dimensional characteristics. The intrinsic thermal conductivity of SiNx is calculated to be 0.747 W/(m?K) and that of SiO2 is 1.085 W/(m?K) based on the dimensional characterization data The thermal conductivity of titanium film with thickness of 100 nm is 6.708 W/(m?K). Compared with photo-thermal methods, it is easier to set up the system of 3ω method. 3ω method uses MEMS manufacturing process to prepare samples to be tested, which is an ideal scheme for characterizing the thermal conductivity of micro- and nanoscale films in MEMS product design and manufacturing. |
| keywords:microbolometer thermal conductance thermal conductivity of thin films 3ω harmonic detection technique |
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